NCE01H10 mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V
(Typ:9.9mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rds.
General Features
* VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V
(Typ:9.9mΩ)
* Special process technology for.
The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V
(Typ:9.9mΩ)
* Spec.
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